Resistive random-access memory (RRAM ou ReRAM) est un type de mémoire non volatile en cours de développement en 2013 par différentes entreprises, dont certaines en ont brevetée des versions (par exemple Sharp Laboratories of America pour le brevet US 6531371 en juin 2001, Samsung Electronics pour le brevet US 7292469 en novembre 2004, et Micron Technology , Spansion , Macronix International , Winbond Electronics , Unity Semiconductor entre ces deux dates).

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dbpedia-owl:abstract
  • Resistive random-access memory (RRAM ou ReRAM) est un type de mémoire non volatile en cours de développement en 2013 par différentes entreprises, dont certaines en ont brevetée des versions (par exemple Sharp Laboratories of America pour le brevet US 6531371 en juin 2001, Samsung Electronics pour le brevet US 7292469 en novembre 2004, et Micron Technology , Spansion , Macronix International , Winbond Electronics , Unity Semiconductor entre ces deux dates). La technologie comporte quelques similitudes à CBRAM et à PRAM (Phase-Change Random Access Memory).En 2013, la presse informatique affiche de bons espoirs que la mémoire RRAM va détrôner la mémoire vive DRAM et la mémoire flash grâce à des performances plusieurs fois supérieures . Selon la société Crossbar, acteur majeur émergeant de la technologie RRAM, cette technologie permet de stocker 1 To de données sur une puce de la taille d’un timbre postal. Elle est également 20 fois plus rapide que la meilleure mémoire flash en août 2013, et consomme 20 fois moins d’énergie. Selon Crossbar, la production à grande échelle de leurs puces RRAM est prévue pour 2015, lors d’un entretien en août 2013.
  • Resistive random-access memory (RRAM or ReRAM) is a non-volatile memory type under development by a number of different companies, some of which have patented versions of ReRAM. The technology bears some similarities to CBRAM and phase change memory.In February 2012 Rambus bought a ReRAM company called Unity Semiconductor for $35 million. Panasonic launched a ReRAM evaluation kit in May 2012, based on a tantalum oxide 1T1R (1 transistor - 1 resistor) memory cell architecture.In 2013, Crossbar introduced a prototype of RRAM as a chip about the size of a postage stamp that can store 1 TB of data. According to an August 2013 interview with Crossbar, the large-scale production of their RRAM chips is scheduled for 2015.Different forms of ReRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.Leon Chua, who is considered to be the father of non-linear circuit theory, has argued that all 2-terminal non-volatile memory devices including ReRAM should be considered memristors. Stan Williams of HP Labs has also argued that all ReRAM should be considered to be a memristor. These claims, however, seem not to be justified given that the memristor theory in itself is open to question. There is an ongoing discussion whether or not redox-based resistively switching elements (ReRAM) are covered by the current memristor theory.
  • RRAM, een afkorting van Resistive Random Access Memory, is een nieuw niet-vluchtig geheugen dat wordt ontwikkeld door Sharp. Er is nog niet veel bekend over de technologie die hiervoor gebruikt wordt, maar volgens Sharp zal het tot maximaal 100 keer sneller zijn dan het huidige flashgeheugen.
  • Резистивная память с произвольным доступом (RRAM, ReRAM, Resistive random-access memory) это энергонезависимая память разрабатывается несколькими компаниями, некоторые из них имеют свои патентованные версии ReRAM. Технология имеет некоторое сходство с CBRAM и PRAM.В феврале 2012 Rambus купила(поглотила) компанию производителя ReRAM под названием Unity Semiconductor за 35 миллионнов долларов.
  • 저항 메모리(Resistive RAM: RRAM 또는 ReRAM)는 차세대 비휘발성 메모리의 한 종류이다.RRAM은 부도체 물질에 충분히 높은 전압을 가하면 전류가 흐르는 통로가 생성되어 저항이 낮아지는 현상을 이용한 것이다. 일단 통로가 생성되면 적당한 전압을 가하여 쉽게 없애거나 다시 생성할 수 있다. 페로브스카이트(perovskite)나 전이금속 산화물, 칼코게나이드 등의 다양한 물질을 이용한 RRAM이 개발되고 있다.
  • La RRAM (nota anche come ReRAM o OxRAM), acronimo di Resistive Random Access Memory, è una tipologia di memoria permanente attualmente in fase di sviluppo, in cui l'informazione memorizzata è associata alla resistenza di un sottile film di materiale commutabile elettricamente.
  • ReRAM(英: resistance random access memory)は電圧の印加による電気抵抗の変化を利用した半導体メモリー。RRAM、抵抗変化型メモリなどとも呼ばれる。なおRRAMはシャープの登録商標である。ReRAMは電圧印加による電気抵抗の大きな変化(電界誘起巨大抵抗変化、CER効果)を利用しており、電圧で書き換えるため(電流が微量で)消費電力が小さい比較的単純な構造のためセル面積が約6F2(Fは配線の径で、数十nm程)と小さく、高密度化(=低コスト化)が可能電気抵抗の変化率が数十倍にものぼり、多値化も容易読み出し時間が10ナノ秒程度と、DRAM並に高速といったデバイスとしての利点がある。
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  • Resistive random-access memory (RRAM ou ReRAM) est un type de mémoire non volatile en cours de développement en 2013 par différentes entreprises, dont certaines en ont brevetée des versions (par exemple Sharp Laboratories of America pour le brevet US 6531371 en juin 2001, Samsung Electronics pour le brevet US 7292469 en novembre 2004, et Micron Technology , Spansion , Macronix International , Winbond Electronics , Unity Semiconductor entre ces deux dates).
  • RRAM, een afkorting van Resistive Random Access Memory, is een nieuw niet-vluchtig geheugen dat wordt ontwikkeld door Sharp. Er is nog niet veel bekend over de technologie die hiervoor gebruikt wordt, maar volgens Sharp zal het tot maximaal 100 keer sneller zijn dan het huidige flashgeheugen.
  • Резистивная память с произвольным доступом (RRAM, ReRAM, Resistive random-access memory) это энергонезависимая память разрабатывается несколькими компаниями, некоторые из них имеют свои патентованные версии ReRAM. Технология имеет некоторое сходство с CBRAM и PRAM.В феврале 2012 Rambus купила(поглотила) компанию производителя ReRAM под названием Unity Semiconductor за 35 миллионнов долларов.
  • 저항 메모리(Resistive RAM: RRAM 또는 ReRAM)는 차세대 비휘발성 메모리의 한 종류이다.RRAM은 부도체 물질에 충분히 높은 전압을 가하면 전류가 흐르는 통로가 생성되어 저항이 낮아지는 현상을 이용한 것이다. 일단 통로가 생성되면 적당한 전압을 가하여 쉽게 없애거나 다시 생성할 수 있다. 페로브스카이트(perovskite)나 전이금속 산화물, 칼코게나이드 등의 다양한 물질을 이용한 RRAM이 개발되고 있다.
  • La RRAM (nota anche come ReRAM o OxRAM), acronimo di Resistive Random Access Memory, è una tipologia di memoria permanente attualmente in fase di sviluppo, in cui l'informazione memorizzata è associata alla resistenza di un sottile film di materiale commutabile elettricamente.
  • ReRAM(英: resistance random access memory)は電圧の印加による電気抵抗の変化を利用した半導体メモリー。RRAM、抵抗変化型メモリなどとも呼ばれる。なおRRAMはシャープの登録商標である。ReRAMは電圧印加による電気抵抗の大きな変化(電界誘起巨大抵抗変化、CER効果)を利用しており、電圧で書き換えるため(電流が微量で)消費電力が小さい比較的単純な構造のためセル面積が約6F2(Fは配線の径で、数十nm程)と小さく、高密度化(=低コスト化)が可能電気抵抗の変化率が数十倍にものぼり、多値化も容易読み出し時間が10ナノ秒程度と、DRAM並に高速といったデバイスとしての利点がある。
  • Resistive random-access memory (RRAM or ReRAM) is a non-volatile memory type under development by a number of different companies, some of which have patented versions of ReRAM. The technology bears some similarities to CBRAM and phase change memory.In February 2012 Rambus bought a ReRAM company called Unity Semiconductor for $35 million.
rdfs:label
  • Resistive random-access memory
  • RRAM
  • RRAM
  • RRAM
  • RRAM
  • ReRAM
  • Resistive random-access memory
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